2005/09/08 by J. Matulewski, S. D. Baranovskii, P. Thomas
Engineering · Materials Science · Physics and Astronomy · #Silicon and Solar Cell Technologies #Thermal properties of materials #Thermography and Photoacoustic Techniques #cond-mat.dis-nn
paper · pdf · doi:10.1002/pssc.200562731
Presented as a poster at TIDS11, to be published in pss(c)
arxiv created 2005/09/08 · openalex publication_date 2006/01/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Abstract The phononless hopping conductivity of a disordered system with localized states is studied in a broad range of frequencies by straightforward computer simulations taking into account Coulomb interactions. At sufficiently low temperatures, the conductivity is determined by the zero‐phonon absorption of the photon by pairs of states. The laser frequency dependence of the conductivity is examined and compared with the analytical model of Efros and Shklovskii and with recent experimental data obtained on Si:P. The range of parameters is determined, for which the conductivity dependence on photon energy best reproduces the experimental results. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)