2005/09/05 by Z. Yu, Zhen Yu, C. Rutherglan P. J. Burke +2
Materials Science · Physics and Astronomy · #Amplifier #Biasing #CMOS #Carbon Nanotubes in Composites #Carbon nanotube #Carbon nanotube field-effect transistor #Computer science #Condensed matter physics #Conductance #Cutoff frequency #Field-effect transistor #Materials science #Mechanical and Optical Resonators #Microwave #Nanotechnology #Nanotube #Optoelectronics #Physics #Quantum and electron transport phenomena #SIGNAL (programming language) #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.2210447
3 pages, 4 figures
arxiv created 2005/09/05 · openalex publication_date 2006/06/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We measure the small signal, 1GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1GHz. This work represents a significant step towards a full characterization of a nanotube transistor for rf and microwave amplifiers.