2005/04/09 by Alireza Saffarzadeh, A. Saffarzadeh, Mustafa Kemal Bahar +2 · 1 citation
Physics and Astronomy · #Asymmetry #Condensed matter physics #Electron #Heterojunction #Magnetic properties of thin films #Materials science #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum tunnelling #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spin polarization #Transfer-matrix method (optics) #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.physe.2005.01.015
published as Physica E 27 (2005) 462 · 13 pages, 6 figures
openalex publication_date 2005/04/09 · arxiv created 2005/09/02 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Using the transfer matrix method and the effective-mass approximation, the effect of resonant states on spin transport is studied in ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric and magnetic fields. The numerical results show that the ZnMnSe layers, which act as spin filters, polarize the electric currents. Variation of thickness of the central ZnSe layer shifts the resonant levels and exhibits an oscillatory behavior in spin current densities. It is also shown that the spin polarization of the tunneling current in geometrical asymmetry of the heterostructure where two ZnMnSe layers have different Mn concentrations, depends strongly on the thickness and the applied bias.