2005/05/21 by Xin Wan, D. N. Sheng, E. H. Rezayi +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.72.075325
published as Phys. Rev. B 72, 075325 (2005) · 13 pages, 8 figures
arxiv created 2005/05/21 · openalex publication_date 2005/08/10 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study the behavior of two-dimensional electron gas in the fractional quantum Hall regime in the presence of finite layer thickness and correlated disordered potential. Generalizing the Chern number calculation to many-body systems, we determine the mobility gaps of fractional quantum Hall states based on the distribution of Chern numbers in a microscopic model. We find excellent agreement between experimentally measured activation gaps and our calculated mobility gaps, when combining the effects of both disordered potential and layer thickness. We clarify the difference between mobility gap and spectral gap of fractional quantum Hall states and explain the disorder-driven collapse of the gap and the subsequent transitions from the fractional quantum Hall states to the insulator.