2005/05/06 by S. A. Bulgadaev, F. V. Kusmartsev
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Phase-change materials and chalcogenides #Solid-state spectroscopy and crystallography #cond-mat.dis-nn #cond-mat.stat-mech
paper · pdf · doi:10.1016/j.physleta.2005.04.096
12 pages, 2 figures, Latex2e
arxiv created 2005/05/06 · openalex publication_date 2005/05/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag2+δSe. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures.