2005/04/28 by Takaaki Koga, Yoshiaki Sekine, Junsaku Nitta · 3 citations
Engineering · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Combinatorics #Condensed matter physics #Controllability #Electron #Ferromagnetism #Gate voltage #Interferometry #Loop (graph theory) #Mathematics #Physics #Precession #Quantum #Quantum and electron transport phenomena #Quantum mechanics #Qubit #Realization (probability) #Semiconductor materials and devices #Spin (aerodynamics) #Spintronics #Square (algebra) #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.74.041302
4pages, 4figures, submitted to Phys. Rev. Lett
arxiv created 2005/04/28 · openalex publication_date 2006/07/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We succeeded in observing gate-controlled electron spin interference in nanolithographically defined square loop arrays that were fabricated in In0.52Al0.48As∕In0.53Ga0.47As∕In0.52Al0.48As quantum wells (QWs). In this experiment, we demonstrated electron spin precession in ballistic channels within the QW that is caused by the Rashba effect. It turned out that the spin precession angle \ensuremathθ was gate controllable by more than 0.75\ensuremathπ for a length of 1.5\phantom\rule0.3em0ex\ensuremathμm. Thus, the demonstration of the large controllability of \ensuremathθ by the applied gate voltage was carried out in a more direct way using spin interference of an electron wave function than the conventional beating analysis of the Shubnikov--de Haas oscillations.