Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

2005/04/30 by S. S. Murzin, S. I. Dorozhkin, D. K. Maude +1 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.72.195317

published as Phys. Rev. 72, 195317 (2005) · 5 pages, 4 figures

arxiv created 2006/01/10 · arxiv updated 2009/12/01

Abstract

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_xy,σ_xx) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_xGa_1-xAs heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σ_xy,σ_xx) point determines a complete flow line.

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