2005/03/15 by M. Dawber, K. M. Rabe, J. F. Scott · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/revmodphys.77.1083
published as Rev. Mod. Phys. (2005) · This is an invited review for Reviews of Modern Physics. We welcome feedback and will endeavour to incorporate comments received promptly into the final version
arxiv created 2005/03/15 · arxiv updated 2009/12/01
This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.