2005/01/31 by S. Das Sarma, E. H. Hwang
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.72.035311
published as Phys. Rev. B 72, 035311 (2005) · 7 pages, 5 figures, revised version with substantial addition
arxiv created 2005/03/31 · openalex publication_date 2005/07/06 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n\text\ensuremath-Si MOSFETs and different in n-type GaAs two-dimensional (2D) systems, with the p-type 2D GaAs system being somewhat intermediate. Based on our calculated results we critically comment on the expected similarities and differences between temperature and field dependent carrier transport properties in various dilute 2D semiconductor systems.