2005/01/31 by E. Gambetti · 1 citation
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.72.165338
published as Phys. Rev. B, 72, 165338 (2005) · 16 pages, 21 figures; minor changes (blanks missing, sentences starting with a mathematical symbol)
openalex publication_date 2005/10/26 · arxiv created 2005/11/02 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The persistent current is here studied in one-dimensional disordered rings that contain interacting electrons. We used the density matrix renormalization group algorithms in order to compute the stiffness, a measure that gives the magnitude of the persistent currents as a function of the boundary conditions for different sets of both interaction and disorder characteristics. In contrast to its noninteracting value, an increase in the stiffness parameter was observed for systems at and off half-filling for weak interactions and nonzero disorders. Within the strong interaction limit, the decrease in stiffness depends on the filling and an analytical approach is developed to recover the observed behaviors. This is required in order to understand its mechanisms. Finally, the study of the localization length confirms the enhancement of the persistent current for moderate interactions when disorders are present at half-filling. Our results reveal two different regimes, one for weak and one for strong interactions at and off half-filling.