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Ballistic resistivity in aluminum nanocontacts

2004/10/06 by Anwar Hasmy, A. Hasmy, A. J. Perez-Jimenez +11
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Molecular Junctions and Nanostructures #Semiconductor materials and devices #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.72.245405

arxiv created 2004/10/06 · openalex publication_date 2005/12/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We perform a representative series of semiclassical molecular dynamics simulations of aluminum nanocontact breakages, coupled to full quantum conductance calculations. This approach allows to obtain realistic conductance histograms of polyvalent species and understand the origin of their peaked structures. The results show that the conductance depends linearly on the contact minimum cross section for the geometrically favored nanocontact configurations. Valid in a broad range of conductance values, such relation suggests the definition of a transport parameter for the nanoscale, that represents the novel concept of ballistic resistivity.

Citations