Theory of Fano–Kondo Effect of Transport Properties through Quantum Dots

2004/10/04 by Isao Maruyama, Naokazu Shibata, Kazuo Ueda · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.1143/jpsj.73.3239

published as J. Phys. Soc. Jpn. 73, 3239 (2004). · 8 pages, 7 figures

arxiv created 2004/10/04 · openalex publication_date 2004/12/15 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model for the T-shaped quantum dot. The conductance as a function of the gate voltage is generally characterized by a Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high and low temperature regions compared with the Kondo temperature T_K: two Fano asymmetric peaks at high temperatures and the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the Finite temperature density matrix renormalization group method (FT-DMRG).

Citations

• Kondo resonances and Fano antiresonances in transport through quantum dots
• Fano resonance in a quantum wire with a side-coupled quantum dot
• Effects of Configuration Interaction on Intensities and Phase Shifts

Cited by

• New trends in density matrix renormalization
• Fano regime of one-dot Aharonov-Bohm interferometers
• Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot