2004/09/12 by Priya Mahadevan, Alex Zunger
Chemistry · Materials Science · Physics and Astronomy · #Acceptor #Advanced Physical and Chemical Molecular Interactions #Chemical and Physical Properties of Materials #Ferromagnetism #Impurity #Magnetic semiconductor #Metal #Semiconductor #Substitution (logic) #Transition metal #ZnO doping and properties #cond-mat.other
paper · pdf · doi:10.1063/1.1799245
4 figures; To appear in Appl. Phys. Lett
arxiv created 2004/09/12 · openalex publication_date 2004/10/04 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, it is found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.