2004/08/20 by Sh. U. Yuldashev, H. C. Jeon, H. S. Im +5
Engineering · Physics and Astronomy · #Condensed matter physics #Curie temperature #Doping #Electrical resistivity and conductivity #Electron #Ferromagnetism #Hall effect #Magnetic Field Sensors Techniques #Magnetic semiconductor #Materials science #Paramagnetism #Physics #Polaron #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.70.193203
15 pages, 5 figures. Phys. Rev. B (to be published)
arxiv created 2004/08/20 · openalex publication_date 2004/11/12 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We have investigated the effect of doping by Te on the anomalous Hall effect in Ga_1\ensuremath-xMnxAs\phantom\rule0.3em0ex(x=0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga_1\ensuremath-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga_1\ensuremath-xMnxAs eventually disappears, and the paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in the Ga0.915Mn0.085As has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma [Phys. Rev. Lett. 88, 247202 (2002)].