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Pressure-Induced Hole Doping of the Hg-Based Cuprate Superconductors

2004/05/07 by Claudia Draxl, C. Ambrosch-Draxl, E. Ya. Sherman +3 · 1 citation
Chemistry · Physics and Astronomy · #Inorganic Fluorides and Related Compounds #Physics of Superconductivity and Magnetism #Superconductivity in MgB2 and Alloys #cond-mat.mtrl-sci #cond-mat.supr-con

paper · pdf · doi:10.1103/physrevlett.92.187004

published as Phys. Rev. Lett., v. 92, 187004 (2004) · 4 pages, 4 figures

openalex publication_date 2004/05/07 · arxiv created 2004/08/12 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We investigate the electronic structure and the hole content in the copper-oxygen planes of Hg-based high T(c) cuprates for one to four CuO2 layers and hydrostatic pressures up to 15 GPa. We find that with the pressure-induced additional number of holes of the order of 0.05e the density of states at the Fermi level changes by approximately a factor of 2. At the same time, the saddle point is moved to the Fermi level accompanied by an enhanced k(z) dispersion. This finding explains the pressure behavior of T(c) and leads to the conclusion that the applicability of the van Hove scenario is restricted. By comparison with experiment, we estimate the coupling constant to be of the order of 1, ruling out the weak coupling limit.

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