2004/08/17 by I. Galanakis, Iosif Galanakis · 2 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Fermi level #Heusler alloys: electronic and magnetic properties #Interface (matter) #Layer (electronics) #Magnetic moment #Magnetic properties of thin films #Moment (physics) #Spintronics #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/0953-8984/16/45/022
published as Journal of Physics: Condensed Matter 16, 8007 (2004) · + the Co/P and Co/In interfaces
arxiv created 2004/08/17 · openalex publication_date 2004/10/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Although the interest in half-metallic Heusler alloys, likely to be usable in spintronic applications, has grown considerably, their interfaces with semiconductors show very low spin polarization. I identify mechanisms which can keep high spin polarization at the interface (more than 80% of the electrons at the Fermi level of majority spin) although the half-metallicity is lost. The large enhancement of the Cr moment at the interface between a CrAl-terminated Co 2 CrAl (001) spacer and the InP(001) semiconductor weakens the effect of the interface states, resulting in this high spin polarization. On the other hand, the Co 2 CrAl/InP interfaces made up by a Co layer and either an In or a P one show a severe decrease of the Co spin moment, but Cr in the subinterface layer is bulklike and the resulting spin polarization is similar to that of the CrAl-based interfaces.