2004/08/09 by D. F. Sullivan, Dan Sullivan, B. E. Kane +2
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Analytical Chemistry (journal) #Characterization (materials science) #Chemistry #Delta #Epitaxy #Integrated Circuits and Semiconductor Failure Analysis #Ion #Layer (electronics) #Materials science #Molecular beam epitaxy #Nanotechnology #Optoelectronics #Perpendicular #Physics #Secondary ion mass spectrometry #Semiconductor materials and devices #Silicon #Thermal diffusivity #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1842366
arxiv created 2004/08/09 · openalex publication_date 2004/12/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data show that the effective thickness of a delta-layer can be obtained through a weak localization analysis of electrical transport measurements performed in perpendicular and parallel magnetic fields. An estimate of the diffusivity of phosphorus in silicon is obtained by applying this method to several samples annealed at 850°C for intervals of 0–15min. With further refinements, this may prove to be the most precise method of measuring delta-layer widths developed to date, including that of secondary ion mass spectrometry analysis.