2004/04/18 by V. N. Strocov, T. Schmitt, J. -E. Rubensson +4 · 1 citation
Physics and Astronomy · #Crystallography and Radiation Phenomena #GaN-based semiconductor devices and materials #X-ray Spectroscopy and Fluorescence Analysis #cond-mat.mtrl-sci
paper · pdf · doi:10.1002/pssb.200409040
3 pages, 1 figure, in press with Rapids of physica status solidi
arxiv created 2004/04/18 · openalex publication_date 2004/04/19 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Abstract Systematic experimental data on resonant inelastic X‐ray scattering (RIXS) in GaN near the N K‐edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k ‐resolved band structure information for GaN crystals and nanostructures. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)