2004/03/31 by D. Chiba, Daichi Chiba, Yoshinori Sato +6 · 1 citation
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.93.216602
published as Physical Review Letters, 93, 216602 (2004) · 16 pages, 4 figures
openalex publication_date 2004/11/18 · arxiv created 2004/11/22 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/\phantom\rule0ex0exGaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5\ifmmode×\else\texttimes\fi0.3 \ensuremathμm2 device revealed that magnetization switching occurs at low critical current densities of 1.1--2.2\ifmmode×\else\texttimes\fi105 A/cm2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.