2004/02/10 by F. Guinea, Rodolfo A. Jalabert, R. A. Jalabert +2
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.stat-mech
paper · pdf · doi:10.1103/physrevb.70.085310
arxiv created 2004/02/10 · openalex publication_date 2004/08/23 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We calculate the lifetime of low-energy electronic excitations in a two-dimensional quantum dot near a metallic gate. We find different behaviors depending on the relative values of the dot size, the dot-gate distance, and the Thomas-Fermi screening length within the dot. The standard Fermi liquid behavior is obtained when the dot-gate distance is much shorter than the dot size or when it is so large that intrinsic effects dominate. Departures from the Fermi liquid behavior are found in the unscreened dipole case of small dots far away from the gate, for which a Caldeira-Leggett model is applicable. At intermediate distances, a marginal Fermi liquid is obtained if there is sufficient screening within the dot. In these last two nontrivial cases, the level width decays as a power law with the dot-gate distance.