Counterflow Measurements in Strongly Correlated GaAs Hole Bilayers: Evidence for Electron-Hole Pairing

2004/02/29 by E. Tutuc, Emanuel Tutuc, M. Shayegan +2 · 8 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.93.036802

published as Phys. Rev. Lett. 93, 036802 (2004) · 4+ pages, 4 figures

arxiv created 2004/07/09 · openalex publication_date 2004/07/12 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling nu=1, demonstrating the pairing of oppositely charged carriers in opposite layers. The counterflow Hall resistance decreases much more strongly than the longitudinal resistances as the temperature is reduced.

Citations

• Observation of Quantized Hall Drag in a Strongly Correlated Bilayer Electron System
• Quantum Ferromagnetism and Phase Transitions in Double-Layer Quantum Hall Systems

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