2003/12/31 by Alexander Khaetskii, J. Carlos Egues, Daniel Loss +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Ferromagnetism #Magnetic field #Magnetic properties of thin films #Magnetic semiconductor #Magnetoresistance #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Range (aeronautics) #Semiconductor #Spin (aerodynamics) #Thermodynamics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.71.235327
published as PRB 71, p. 235327 (2005). · 6 pages, 3 eps figs. (extended version- new title + two new figures added)
arxiv created 2004/12/29 · openalex publication_date 2005/06/27 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We have reconsidered the problem of spin injection across ferromagnet/nonmagnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/nonmagnetic-semiconductor (DMS/NMS) interfaces, for structures with finite width d of the magnetic layer (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the d dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong d dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.