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Coherently Photoinduced Ferromagnetism in Diluted Magnetic Semiconductors

2003/12/18 by J. Fernández‐Rossier, J. Fernández-Rossier, Carlo Piermarocchi +4 · 44 citations
Materials Science · Physics and Astronomy · #Band gap #Coherence (philosophical gambling strategy) #Condensed matter physics #Conduction band #Diamond and Carbon-based Materials Research #Electron #Ferromagnetism #Magnetic semiconductor #Materials science #Nuclear physics #Optoelectronics #Physics #Quantum and electron transport phenomena #Semiconductor #Semiconductor Quantum Structures and Devices #Valence (chemistry) #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.93.127201

published in Physical Review Letters 93(12), 127201 (American Physical Society) · 11 pages, 2 figures, preprint style

arxiv created 2003/12/18 · openalex publication_date 2004/09/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T(C) depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1K.

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