2003/10/28 by C. Pennetta, Eleonora Alfinito, E. Alfinito +3 · 1 citation
Computer Science · Engineering · Physics and Astronomy · #Neural Networks and Applications #Power Transformer Diagnostics and Insulation #Theoretical and Computational Physics #cond-mat
paper · pdf · doi:10.1088/0268-1242/19/4/057
published as Semic. Sci. Tech. 19(4) S164 (2004) · 3 figures, accepted for publication on Semicond Sci Tech
arxiv created 2003/10/28 · openalex publication_date 2004/03/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
We study the resistance fluctuation distribution of a thin film near electrical breakdown. The film is modelled as a stationary resistor network under biased percolation. Depending on the value of the external current, on the system sizes and on the level of internal disorder, the fluctuation distribution can exhibit a non-Gaussian behaviour. We analyse this non-Gaussianity in terms of the generalized Gumbel distribution recently introduced in the context of highly correlated systems near criticality. We find that when the average fraction of defects approaches the random percolation threshold, the resistance fluctuation distribution is well described by the universal behaviour of the Bramwell–Holdsworth–Pinton distribution.