2003/07/31 by V. K. Dugaev, Jamal Berakdar, J. Berakdar +2 · 3 citations
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.68.104434
7 pages, 4 figures
arxiv created 2003/07/31 · openalex publication_date 2003/09/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is calculated in the regime of strong electron reflection from the wall. It is shown that the corresponding magnetoresistance can be large, which is in a qualitative agreement with recent experimental observations. We also calculate the spin current flowing through the wall and the spin polarization of electron gas due to reflections from the domain wall.