2003/07/31 by Jean-Eric Wegrowe, J. -E. Wegrowe, Manupriyam Dubey +7
Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Magnetic properties of thin films #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1767610
3 figures
arxiv created 2003/07/31 · openalex publication_date 2004/10/04 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Magnetization switching provoked by spin injection is studied in Ni nanowires of various sizes and morphologies. The response of the magnetization to current injection is measured as a function of the amplitude of the current, the temperature, and the symmetry of the interfaces. The efficiency of the response of the magnetization of spin injection is a decreasing function of the temperature, does not depend on the current sign, and occurs only in the case of asymmetric interfaces. It is shown that the switching provoked by spin injection is not affected by the presence of a magnetic domain inside the layer. Some consequences in terms of spin transfer or exchange torque are discussed.