2003/07/28 by K. C. Hall, Kimberley C. Hall, Wayne H. Lau +5 · 2 citations
Computer Science · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum Computing Algorithms and Architecture #Quantum and electron transport phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1609656
Accepted for publication in Applied Physics Letters
arxiv created 2003/07/28 · openalex publication_date 2003/10/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a spin transistor using only nonmagnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor.