2003/07/03 by C. Grimaldi, T. Maeder, P. Ryser +2
Engineering · Materials Science · Physics and Astronomy · #Electrical and Thermal Properties of Materials #Magneto-Optical Properties and Applications #Transition Metal Oxide Nanomaterials #cond-mat.dis-nn #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1590733
published as Appl. Phys. Lett. vol.83, pag.189 (7 July 2003) · 3 pages, 1 figure
openalex publication_date 2003/07/03 · arxiv created 2003/07/07 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We propose a model of transport in thick-film resistors which naturally explains the observed nonuniversal values of the conductance exponent t extracted in the vicinity of the percolation transition. Essential ingredients of the model are the segregated microstructure typical of thick-film resistors and tunneling between the conducting grains. Nonuniversality sets in as a consequence of wide distribution of interparticle tunneling distances.