2003/06/12 by Raghava P. Panguluri, R. Panguluri, G. M. Tsoĭ +7 · 1 citation
Materials Science · Physics and Astronomy · #Heusler alloys: electronic and magnetic properties #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.68.201307
5 Figures
arxiv created 2003/06/12 · openalex publication_date 2003/11/24 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We use point contact Andreev reflection spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead, acquired simultaneously with the spin polarization measurements, we demonstrate that all the contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.