Spin Readout and Initialization in a Semiconductor Quantum Dot

2003/04/30 by Mark Friesen, Charles Tahan, Robert Joynt +1 · 5 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci #quant-ph

paper · pdf · doi:10.1103/physrevlett.92.037901

published as Phys. Rev. Lett. v92, p037901 (2004) · Published version

openalex publication_date 2004/01/20 · arxiv created 2004/03/29 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted channels for decoherence. Here, we propose a novel spin-charge transduction scheme, converting spin information to orbital information within a single quantum dot by microwave excitation. The same quantum dot can be used for rapid initialization, gating, and readout. We present detailed modeling of such a device in silicon to confirm its feasibility.

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