Effect of bulk inversion asymmetry on the Datta-Das transistor

2003/04/14 by A. Łusakowski, J. Wróbel, T. Dietl · 2 citations
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.68.081201

published as Phys. Rev. B68, 081201(R) (2003) · 4 pages, Revtex4, 4 EPS figures

arxiv created 2003/04/14 · openalex publication_date 2003/08/08 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs- and InAs-based devices.

Citations

• Giant spin relaxation anisotropy in zinc-blende heterostructures
• Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
• Spin-Orbit Coupling Effects in Zinc Blende Structures

Cited by

• Datta-Das transistor: Significance of channel direction, size dependence of source contacts, and boundary effects
• All-electric quantum point contact spin-polarizer