2003/04/04 by Christoph Adelmann, C. Adelmann, Eirini Sarigiannidou +13 · 1 citation
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1581386
Submitted to APL
arxiv created 2003/04/04 · openalex publication_date 2003/06/06 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We demonstrate the growth of GaN/AlN quantum-well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of 9.2±1.0 MV/cm is deduced from the dependence of the emission energy on the well width.