2003/04/01 by G. Seelig, Georg Seelig, S. Pilgram +4 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.68.161310
published as Phys. Rev. B 68, 161310 (2003) · 4 pages, 3 figures
arxiv created 2003/04/01 · openalex publication_date 2003/10/23 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Dephasing in a ballistic four-terminal Aharonov-Bohm geometry due to charge and voltage fluctuations is investigated. Treating two terminals as voltage probes, we find a strong dependence of the dephasing rate on the probe configuration in agreement with a recent experiment by Kobayashi, Aikawa, Katsumoto, and Iye [J. Phys. Soc. Jpn. 71, 2094 (2002)]. Voltage fluctuations in the measurement circuit are shown to be the source of the configuration dependence.