2003/03/31 by Yogesh N. Joglekar, Hoang Ky Nguyen, Hoang K. Nguyen +1 · 1 citation
Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Composite fermion #Condensed matter physics #Conductance quantum #Electron #Fractional quantum Hall effect #Gapless playback #Graphene research and applications #Hamiltonian (control theory) #Mathematics #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum point contact #Quantum spin Hall effect #Quantum tunnelling #Quantum well #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.68.035332
published as Phys. Rev. B 68, 035332 (2003). · 11 pages, 9 figures; minor typos corrected; added 2 references
openalex publication_date 2003/07/30 · arxiv created 2003/08/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Two-dimensional electron systems exhibiting the fractional quantum Hall effects are characterized by a quantized Hall conductance and a dissipationless bulk. The transport in these systems occurs only at the edges of the incompressible quantum Hall regions, where gapless excitations are present. We present a microscopic calculation of the edge states in the fractional quantum Hall systems at various filling factors using the extended Hamiltonian theory of the fractional quantum Hall effect. We find that at \ensuremathν=1/3, the quantum Hall edge undergoes a reconstruction as the background potential softens, whereas the quantum Hall edges at higher filling factors, such as \ensuremathν=2/5,3/7, are robust against reconstruction. We present the results for the dependence of the edge states on various system parameters such as temperature, functional form and range of electron-electron interactions, and the confining potential. Our results have implications for the tunneling experiments into the edge of a fractional quantum Hall system.