2002/05/28 by Rui-Hua Xie, Rui‐Hua Xie, Garnett W. Bryant +3 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.65.235306
published as Phys.Rev.B Vol.65, 235306 (2002) · 3 figures, to appear in Phys.Rev.B
openalex publication_date 2002/05/28 · arxiv created 2003/01/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Electron-hole correlation in quantum-dot quantum wells (QDQW's) is investigated by incorporating Coulomb and exchange interactions into an empirical tight-binding model. Sufficient electron and hole single-particle states close to the band edge are included in the configuration to achieve convergence of the first spin-singlet and triplet excitonic energies within a few meV. Coulomb shifts of about 100 meV and exchange splittings of about 1 meV are found for CdS/HgS/CdS QDQW's (4.7 nm CdS core diameter, 0.3 nm HgS well width, and 0.3 nm to 1.5 nm CdS clad thickness) that have been characterized experimentally by Weller and co-workers [D. Schooss, A. Mews, A. Eychm"uller, H. Weller, Phys. Rev. B, 49, 17 072 (1994)]. The optical excitonic gaps calculated for those QDQW's are in good agreement with the experiment.