2002/11/14 by A. G. Petukhov, D. O. Demchenko, A. N. Chantis
Materials Science · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.68.125332
11 pages, 4 eps figures
arxiv created 2002/11/14 · openalex publication_date 2003/09/29 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaxMn_1\ensuremath-xSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin-polarized electrons injected into bulk InAs make spin-resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.