2002/10/22 by B. S. Sørensen, B. S. Sorensen, J. Sadowski +3 · 17 citations
Chemistry · Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Chemistry #Condensed matter physics #Curie #Curie temperature #Electrical resistivity and conductivity #Epitaxy #Ferromagnetism #GaN-based semiconductor devices and materials #Hall effect #Layer (electronics) #Magnetic properties of thin films #Materials science #Molecular beam epitaxy #Nanotechnology #Phase (matter) #Physics #Thin film #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.66.233313
published in Physical review. B, Condensed matter 66(23) (American Physical Society) · 6 pages, 4 figures
arxiv created 2002/10/22 · openalex publication_date 2002/12/31 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We present the magnetotransport properties of very thin (5--15 nm) single (Ga,Mn)As layers grown by low-temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical-transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of 7.1\ifmmode×\else\texttimes\fi1020cm^\ensuremath-3 for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.