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Theory of neutral and charged exciton scattering with electrons in semiconductor quantum wells

2002/07/11 by Guy Z. Ramon, G. Ramon, A. Mann +1 · 1 citation
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strong Light-Matter Interactions #cond-mat

paper · pdf · doi:10.1103/physrevb.67.045323

published as Phys. Rev. B 67, 045323 (2003) · 18 pages, 12 figures

arxiv created 2002/07/11 · openalex publication_date 2003/01/31 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Electron scattering on both neutral (X) and charged (X^\ensuremath-) excitons in quantum wells is studied theoretically. A microscopic model is presented, taking into account both elastic and dissociating scattering. The model is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the exciton scattering rates. Scattering by electrons is found to be an efficient process even for very low electron densities. In particular, the charged exciton linewidth due to electron scattering is larger than that of the neutral exciton, partially because of the larger contribution from the dissociating process. Calculated reflection spectra are then obtained by considering the three electronic excitations of the system, namely, the heavy-hole and light-hole 1S neutral excitons, and the heavy-hole 1S charged exciton, with the appropriate oscillator strengths.

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