2002/07/31 by Vincenzo Piazza, Vittorio Pellegrini, Fabio Beltram +2 · 1 citation
Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1016/s0038-1098(03)00317-x
7 pages, including 4 figures Changes made to introduction Added figure Submitted to SSC
arxiv created 2003/03/25 · openalex publication_date 2003/05/19 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched exponential behavior and correlates with hysteresis loops observed by sweeping the magnetic field. These experiments indicate that metastable randomly-distributed magnetic domains are involved in the relaxation process in a way that is equivalently tunable by a change in gate voltage or temperature.