1999/12/01 by Jonas Fransson, J. Fransson, O. Eriksson +2 · 1 citation
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1016/s0921-4526(99)00343-9
published as Physica B 272 28-30 (1999) · 3 pages, 1 table, 1 figure
openalex publication_date 1999/12/01 · arxiv created 2001/11/30 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
An approach which allows to include the corrections from non-orthogonality of electron states in contacts and quantum dots is developed. Comparison of the energy levels and charge distributions of electrons in 1D quantum dot (QD) in equilibrium, obtained within orthogonal (OR) and non-orthogonal representations (NOR), with the exact ones shows that the NOR provides a considerable improvement, for levels below the top of barrier. The approach is extended to non-equilibrium states. A derivation of the tunneling current through a single potential barrier is performed using equations of motion for correlation functions. A formula for transient current derived by means of the diagram technique for Hubbard operators is given for the problem of QD with strongly correlated electrons interacting with electrons in contacts. The non-orthogonality renormalizes the tunneling matrix elements and spectral weights of Green functions (GFs).