2001/09/04 by Ren‐Bao Liu, Ren-Bao Liu, Bang‐Fen Zhu +1 · 1 citation
Chemistry · Engineering · Physics and Astronomy · #Laser-Matter Interactions and Applications #Spectroscopy and Laser Applications #Terahertz technology and applications #astro-ph #cond-mat #physics.atom-ph
paper · pdf · doi:10.1103/physrevb.66.033106
published as Phys.Rev. B66 (2002) 033106 · 4 pages and 4 figures
arxiv created 2001/09/04 · openalex publication_date 2002/07/08 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
Calculation of near-infrared absorption and transient spectra in bulk semiconductors irradiated by an intense terahertz (THz) laser predicts that, the ionization rate of the ground-state exciton, probed through the dynamic Fano resonance effect may decrease with the increase of the THz laser intensity. This counterintuitive effect indicates the excitons are stabilized against the field ionization. The much lower Rydberg energy and ``atomic unit'' of laser intensity for excitons and, in particular, the possibility of creating excitons from the ``vacuum state'' in semiconductors allow observing the excitonic stabilization experimentally, in contrast to the case of atomic stabilization.