2001/08/31 by Charles Santori, Glenn S. Solomon, Matthew Pelton +2 · 4 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.65.073310
one typo fixed
arxiv created 2001/11/22 · openalex publication_date 2002/02/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The multiexcitonic decay process in a single InAs quantum dot is studied through high-resolution time-resolved spectroscopy. A cascaded emission sequence involving three spectral lines is seen that is described well over a wide range of pump powers by a simple model. The measured biexcitonic decay rate is about 1.5 times the single-exciton decay rate. This ratio suggests the presence of selection rules, as well as a significant effect of the Coulomb interaction on the biexcitonic wave function.