2001/08/31 by Raimundo R. dos Santos, L. E. Oliveira, Luiz E. Oliveira +2 · 3 citations
Materials Science · Physics and Astronomy · #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1088/0953-8984/14/14/308
published as J Phys: Condensed Matter 14, 3751 (2002) · 4 pages, 3 figures, RevTeX 3; Fig. 1 changed, new references added
arxiv created 2002/01/11 · openalex publication_date 2002/03/28 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds in order to discuss the dependence of the hole density on that of Mn sites in Ga 1- x Mn x As. The hole concentration, p , as a function of the fraction of Mn sites, x , is parametrized in terms of the product m * J pd 2 (where m * is the hole effective mass and J pd is the Kondo-like hole/local-moment coupling), and the critical temperature T c . By using experimental data for these quantities, we have established the dependence of the hole concentration on x , which can be associated with the occurrence of a re-entrant metal-insulator transition taking place in the hole gas. We also calculated the dependence of the Mn magnetization on x , for different temperatures ( T ), and found that as T increases, the width of the composition-dependent magnetization decreases dramatically, and that the magnetization maxima also decrease in magnitude, indicating the need for quality control of the Mn doping level in diluted magnetic semiconductor devices.