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Stochastic Heterostructures and Diodium in B/N-Doped Carbon Nanotubes

2001/08/10 by Paul E. Lammert, Vincent H. Crespi, Angel Rubio +1 · 1 citation
Materials Science · Physics and Astronomy · #Boron and Carbon Nanomaterials Research #Carbon Nanotubes in Composites #Graphene research and applications #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.87.136402

4 pages RevTeX, 4 PostScript figures

arxiv created 2001/08/10 · openalex publication_date 2001/09/10 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Carbon nanotubes are one dimensional and very narrow. These obvious facts imply that, under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of exploiting such fluctuations to create interesting devices. Using the self-consistent tight-binding technique, we study heavily doped highly compensated nanotubes, revealing the spontaneous formation of structures resembling chains of random quantum dots, or nanoscale diodelike elements in series. We also consider truly isolated impurities, revealing simple scaling properties of bound state sizes and energies.

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