Dissociation of Vertical Semiconductor Diatomic Artificial Molecules

2001/06/12 by M. Pí, M. Pi, Agustí Emperador +9 · 3 citations
Materials Science · Physics and Astronomy · #Quantum Dots Synthesis And Properties #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat

paper · pdf · doi:10.1103/physrevlett.87.066801

published as Phys. Rev. Lett. 87, (2001) 66801 · Accepted for publication in Phys. Rev. Lett

arxiv created 2001/06/12 · openalex publication_date 2001/07/18 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2 meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit.

Citations

• Spin-density-functional theory of circular and elliptical quantum dots
• Self-interaction correction to density-functional approximations for many-electron systems

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