2001/06/30 by Igor Žutić, Igor Zutic, Jaroslav Fabian +1 · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Magnetic properties of thin films #Quantum and electron transport phenomena #cond-mat
paper · pdf · doi:10.1103/physrevlett.88.066603
published as Phys. Rev. Lett. 88, 066603 (2002) · Minor Revisions. To appear in Phys. Rev. Lett
arxiv created 2001/12/04 · openalex publication_date 2002/01/29 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/01
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.