2001/03/28 by M. Pohlt, M. Lynass, J. G. S. Lok +5 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Materials and Semiconductor Technologies #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1463698
arxiv created 2001/03/28 · openalex publication_date 2002/03/25 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Separately contacted layers of a two-dimensional (2D) electron gas and a 2D hole gas have been prepared in GaAs, which are separated by AlGaAs barriers down to 15 nm thickness. The molecular-beam-epitaxial growth was interrupted just before growth of the double-layer structure in order to use in situ focused-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in the forward direction and show independent transistor-like behavior.