2001/03/22 by Igor Žutić, Igor Zutic, Jaroslav Fabian +1
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Chemistry #Condensed matter physics #Depletion region #Electron #Optoelectronics #Physics #Polarization (electrochemistry) #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spin Hall effect #Spin diffusion #Spin polarization #Spin transistor #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.64.121201
published as Phys. Rev. B 64, 121201 (2001) · 4 pages, 3 figures
arxiv created 2001/03/22 · openalex publication_date 2001/08/16 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
A drift-diffusion model for spin-charge transport in spin-polarized p\ensuremath-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized p\ensuremath-n junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.