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Critical behaviour near the metal-insulator transition of a doped Mott insulator

2001/03/19 by Y. Ono, Yūichi Ono, R. Bulla +3 · 2 citations
Physics and Astronomy · #Advanced Chemical Physics Studies #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.str-el

paper · pdf · doi:10.1007/pl00011147

published as Eur. Phys. J. B 22, 283 (2001) · 13 pages, 3 figures

arxiv created 2001/03/19 · openalex publication_date 2001/08/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31

Abstract

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value Uc, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping.

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