2001/02/04 by E. H. Hwang, S. Das Sarma · 3 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.64.165409
published as Phys. Rev. B 64, 165409 (2001) · 6 pages with 5 figures
arxiv created 2001/02/04 · openalex publication_date 2001/10/05 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We theoretically calculate the finite-wave-vector plasmon dispersion in a low-density two-dimensional (2D) electron layer taking into account finite temperature, finite layer width, and local-field corrections. We compare our theoretical results with recent Raman-scattering spectroscopic experimental 2D plasmon dispersion data in GaAs quantum wells at very low carrier densities (rs>10) and large wave vectors (q>~kF). We find good agreement with the experimental data, providing an explanation for why the experimentally measured dispersion seems to obey the simple classical long-wavelength 2D plasmon dispersion formula. We also provide a critical discussion on the observable manifestations of the quantum-classical and the Wigner crystal--electron liquid crossover behavior in the 2D plasmon properties as a function of electron density and temperature in GaAs quantum-well systems.